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Updated: Jun 7, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Low-frequency noise of MoTe2 transistor: effects on ambipolar carrier transport and CYTOP doping
Wonjun Shin1,2, Dong Hyun Lee3, Raksan Ko3
1Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
Abstract:
Low-frequency noise (LFN) characteristics of semiconductor devices pose a significant importance for understanding their working principle, particularly concerning material imperfections. Accordingly, substantial research endeavors have focused on characterizing the LFN of devices. However, the LFN characteristics of the ambipolar transistors have been rarely demonstrated. Herein, we investigate the effects of ambipolar carrier transport and CYTOP-induced p-type doping on low-frequency noise characteristics of MoTe2 transistors. The source of the 1/f noise differs between the n-type (electron transport) and p-type (hole transport) modes. Notably, the influence of contact resistance is more pronounced in the n-type mode. CYTOP doping suppresses the n-type mode by introducing hole doping effects. Furthermore, CYTOP doping mitigates the impact of contact resistance on excess noise.
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