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p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like

Jiqing Lu1,2, Mei Shen3, Xuewei Feng4

  • 1Harbin Institute of Technology, Harbin 150001, China.

Nano Letters
|November 19, 2024
PubMed

Keywords:
BEOLSnOxlow temperaturep-type oxidesthin-film transistors

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