Quantum Hall effect in a CVD-grown oxide

Area of Science:

• Condensed Matter Physics
• Materials Science
• Quantum Phenomena

Background:

• Two-dimensional (2D) electron systems are crucial for studying correlated quantum phenomena.
• 2D oxides offer a versatile platform for diverse quantum phases, including the quantum Hall effect, superconductivity, and magnetism.
• Achieving these quantum phases in 2D oxides depends significantly on advanced heterostructure growth techniques.

Purpose of the Study:

• To demonstrate the integer quantum Hall effect in chemical vapor deposition (CVD) grown Bismuth Oxyde Selenide (Bi2O2Se).
• To establish Bi2O2Se as an accessible and structurally flexible 2D oxide platform for quantum physics research.
• To explore the tunability of electron systems in Bi2O2Se for novel quantum phase investigations.

Main Methods:

• Fabrication of thin films of Bismuth Oxyde Selenide (Bi2O2Se) using chemical vapor deposition (CVD).
• Engineering of single or few subband two-dimensional electron systems (2DES) by controlling film thickness.
• Tuning of electron occupation in the 2DES via the electric field effect.

Main Results:

• Successful observation of the integer quantum Hall effect in CVD-grown Bi2O2Se.
• Demonstration of subband control through film thickness, a key design parameter for the 2DES.
• Bi2O2Se exhibits a unique small effective mass, differentiating it from other high-mobility oxides.

Conclusions:

• Bismuth Oxyde Selenide (Bi2O2Se) serves as a promising and accessible 2D oxide material for realizing quantum Hall physics.
• The layered structure of Bi2O2Se allows for structural flexibility and scalable growth.
• This material provides a novel platform for exploring quantum phenomena in tunable two-dimensional electron systems.