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Continuous wave THz receivers with rhodium-doped InGaAs enabling 132 dB dynamic range
Optics Express
|November 22, 2024
Summary
We developed new terahertz detectors using rhodium-doped indium gallium arsenide (InGaAs). These detectors show 10x better performance than iron-doped versions, achieving a record dynamic range for terahertz spectroscopy.
Area of Science:
- Terahertz (THz) Spectroscopy
- Semiconductor Device Physics
- Materials Science
Background:
- Photoconductive antennas are crucial for terahertz (THz) generation and detection.
- Indium gallium arsenide (InGaAs) is a common material for these detectors.
- Iron (Fe)-doped InGaAs has been widely used, but its performance has limitations.
Purpose of the Study:
- To develop novel, high-performance photoconductive terahertz detectors.
- To investigate the potential of rhodium (Rh)-doped InGaAs for THz applications.
- To compare the performance of Rh-doped InGaAs detectors against traditional Fe-doped InGaAs detectors.
Main Methods:
- Grown rhodium- (Rh) doped indium gallium arsenide (InGaAs) using molecular beam epitaxy.
- Fabricated photoconductive antennas for continuous wave (cw) terahertz detection.
- Utilized a homodyne spectrometer configuration for performance evaluation.
- Measured responsivity, noise-equivalent-power (NEP), bandwidth, and dynamic range (DNR).
Main Results:
- Rh-doped InGaAs exhibits higher carrier mobilities compared to Fe-doped InGaAs, with similar carrier lifetimes.
- The developed Rh-doped InGaAs photoconductive antennas demonstrate a 10-fold improvement in responsivity and NEP over InGaAs:Fe detectors.
- A record peak dynamic range (DNR) of 132 dB was achieved, representing a 20 dB enhancement.
Conclusions:
- Rhodium-doped InGaAs is a superior material for photoconductive terahertz detectors compared to iron-doped InGaAs.
- These new detectors offer significantly enhanced performance, particularly in responsivity and dynamic range.
- The findings pave the way for more sensitive and advanced terahertz spectroscopy systems.
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