Enhanced electroluminescence from SnO₂ nanocrystals/Er³⁺ co-doped silica thin film via Yb³⁺ doping

We prepared Yb³⁺ doped SiO₂-SnO₂:Er³⁺ films by sol-gel method in order to develop the high-efficient rare-earth light emitting devices. The enhanced characteristic near-infrared photoluminescence related to Er³⁺ ions was achieved as usual since the introduction of Yb³⁺ ions is equivalent to adding a new energy transfer channel. We further designed and fabricated the electroluminescent device based on SiO₂-SnO₂:Er³⁺/Yb³⁺ films. Interestingly, we demonstrated the significant enhancement of the near-infrared electroluminescence of Er³⁺ ions. Compared with the electroluminescent device without Yb³⁺ ions, the near-infrared electroluminescence integrated intensity of the Er³⁺/Yb³⁺ co-doped one is enhanced by more than 12 times. Our electroluminescent devices also exhibited good operating stability, which has great potential for the development of stable silicon-based light sources.