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Updated: Jun 6, 2025

Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals
Published on: May 29, 2018
Robust single modified divacancy color centers in 4H-SiC under resonant excitation
Zhen-Xuan He1,2,3,4, Ji-Yang Zhou1,2,3, Qiang Li5,6
1CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, China.
Abstract:
Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to charge variations, hampering the efficacy of spin-photon interfaces. Recent research predicted that modified divacancy color centers can stabilize their charge states, resisting photoionization. This study presents a method for precisely creating single divacancy arrays in 4H-SiC using a focused helium ion beam. Photoluminescence tests reveal consistent emission with minimal linewidth fluctuations (∼50 MHz over 3 h). By measuring the ionization rate for different polytypes of divacancies, we found that the modified divacancies are more robust against resonant excitation. Furthermore, angle-resolved photoluminescence excitation spectra unveil two resonant-transition lines with orthogonal polarizations. Enhanced optical and spin characteristics were notably observed in these color centers compared to those generated through carbon-ion and shallow implantation methods, positioning modified divacancies as promising contenders for advancing quantum networking.
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