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Published on: September 8, 2017
Enhanced light extraction by optimizing near-infrared perovskite-based light emitting diode (PeLED)
Nava Tabibifar1, Mehdi Eskandari2, Farhad Akbari Boroumand1
1Department of Electrical Engineering, K. N. Toosi University (KNTU), Tehran, Iran.
Perovskite light-emitting diodes (PeLEDs) show improved light extraction efficiency (LEE) through layer optimization. This study achieved a 42.89% LEE in the near-infrared region for PeLEDs.
Area of Science:
- Optoelectronics
- Materials Science
- Photonics
Background:
- Perovskite-based light-emitting diodes (PeLEDs) are promising optoelectronic devices with diverse applications.
- Despite high External Quantum Efficiency (EQE), PeLEDs suffer from limited light extraction efficiency (LEE) compared to Organic Light-Emitting Diodes (OLEDs).
Purpose of the Study:
- To enhance the light extraction efficiency (LEE) of perovskite light-emitting diodes (PeLEDs).
- To investigate the impact of layer thickness optimization and active layer absorption manipulation on LEE.
Main Methods:
- Optimizing the layer thickness within the PeLED structure.
- Manipulating light absorption within the active layer (AL).
- Utilizing CH(NH2)2PbI3 perovskite in the emissive layer (EML).
Main Results:
- Achieved a significant increase in light extraction efficiency (LEE) by nearly 20%.
- Reached a LEE of 42.89% in the near-infrared (NIR) spectral region.
- Demonstrated the effectiveness of structural optimization for improved light outcoupling.
Conclusions:
- Layer thickness optimization and active layer absorption control are crucial for enhancing PeLED performance.
- The developed strategy significantly boosts LEE, particularly in the NIR region.
- This research provides a pathway for developing more efficient NIR-emitting PeLEDs.
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