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Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data
Mengtian Bao1, Ying Wang1, Jianqun Yang2
1School of Information Science and Technology, Dalian Maritime University, Dalian 116026, China.
Micromachines
|November 27, 2024
Summary
This study introduces a new method to analyze radiation damage in power MOSFETs by observing current changes. The technique helps understand internal device damage and its severity during irradiation events.
Area of Science:
- Semiconductor device physics
- Radiation effects in electronics
- Materials science
Background:
- Single-event radiation damage poses a significant threat to the reliability of power MOSFET devices.
- Understanding the internal physical mechanisms and evolution of radiation damage is crucial for device design and hardening.
- Current external characteristics of devices often lack direct correlation with microscopic damage processes.
Purpose of the Study:
- To develop a statistical analysis method for evaluating single-event radiation damage in power MOSFETs.
- To establish a link between observable external current characteristics and internal microscopic physical quantities (current-carrier mapping).
- To propose methods for recognizing the radiation evolution process and damage mechanisms.
Main Methods:
- A novel data fluctuate-collapse transform analysis method was developed based on the temporal characteristics of gate/drain current.
- A carrier dynamic balance ratio was defined using current data to quantify radiation damage degree.
- Technology Computer-Aided Design (TCAD) simulations were employed to investigate the relationship between external electrical behavior and internal physical phenomena.
Main Results:
- The fluctuate-collapse transformation analysis effectively reveals the evolution process of irradiation events within the device.
- The carrier dynamic balance ratio provides a quantitative measure for assessing the severity of radiation damage.
- TCAD simulations confirmed the correlation between external current dynamics and internal physical quantity evolution.
Conclusions:
- The proposed current data timing analysis offers enhanced insight into internal irradiation event progression.
- The statistical analysis using the carrier dynamic balance ratio can effectively evaluate the extent of radiation damage in power MOSFETs.
- This approach provides a valuable tool for understanding and mitigating radiation effects in semiconductor devices.
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