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Updated: Jun 6, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Quantum Channel Extreme Bandgap AlGaN HEMT

Michael Shur1, Grigory Simin2, Kamal Hussain3

  • 1Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.

Micromachines
|November 27, 2024
PubMed

Keywords:
AlGaNHEMTbreakdown fieldmobilityquantization

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