Hybrid High-Power AlGaN/CdZnO/GaN/AlGaN HEMT with High Breakdown Voltage.

Area of Science:

• Materials Science
• Semiconductor Physics
• Device Engineering

Background:

• High-electron mobility transistors (HEMTs) are crucial for high-power electronics.
• AlGaN/GaN HEMTs commonly use Indium Gallium Nitride (InGaN) as the channel layer.
• Exploring alternative channel materials is vital for enhancing device performance.

Purpose of the Study:

• To investigate the impact of replacing InGaN with Cadmium Zinc Oxide (CdZnO) in AlGaN/GaN HEMTs.
• To analyze the electrical characteristics and breakdown voltage of CdZnO-based HEMTs.
• To assess the suitability of these novel HEMTs for high-power applications.

Main Methods:

• Utilized simulation analysis to compare AlGaN/CdZnO/GaN/AlGaN/SiC HEMT structures with conventional AlGaN/InGaN/GaN/AlGaN/SiC HEMTs.
• Varied Aluminum (Al) content in the barrier layer to observe effects on device performance.
• Evaluated drain current, transconductance, and breakdown voltage.

Main Results:

• Both structures showed increased drain current and transconductance with higher Al content.
• HEMTs with CdZnO exhibited superior drain current compared to InGaN counterparts at identical Al content.
• Breakdown voltage decreased with increasing Al content, with CdZnO-based HEMTs showing a slightly higher breakdown voltage (~795 V vs. ~768 V) at lower Al content (x=0.10).

Conclusions:

• CdZnO is a viable alternative to InGaN for HEMT channel layers.
• CdZnO-based HEMTs demonstrate enhanced drain current and comparable breakdown voltage, indicating significant potential.
• These findings suggest promising applications for CdZnO-based HEMTs in high-power, high-frequency electronic systems.