Charge Diffusion and Repulsion in Semiconductor Detectors.

Area of Science:

• Physics
• Materials Science
• Engineering

Background:

• Semiconductor detectors are crucial for high-energy sensing (X/γ-rays) in diverse fields like astronomy, medical imaging, and security.
• Accurate detector characterization is vital for optimizing imaging system design and performance through digital twins.
• Existing simulations often omit charge diffusion and Coulomb repulsion due to complexity, limiting fidelity.

Purpose of the Study:

• To evaluate existing methods for simulating charge diffusion and Coulomb repulsion in semiconductor detectors.
• To propose and validate a novel Monte Carlo technique for high-fidelity detector simulation.
• To enable more realistic performance predictions for advanced sensing applications.

Main Methods:

• Evaluation of established simulation approaches (Gatti, 1987; Benoit & Hamel, 2009).
• Development of a novel Monte Carlo simulation technique.
• Inclusion of charge diffusion and Coulomb repulsion phenomena in the simulation model.

Main Results:

• The novel Monte Carlo method provides higher accuracy compared to existing approaches.
• The proposed technique accounts for charge diffusion and Coulomb repulsion effects.
• The new method achieves realistic performance predictions within practical computational constraints.

Conclusions:

• Accurate simulation of semiconductor detectors requires incorporating charge diffusion and Coulomb repulsion.
• The novel Monte Carlo technique offers a more precise approach to detector characterization.
• This advancement supports the development of improved digital twins for high-energy sensing systems.