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Related Concept Videos

Inductively Coupled Plasma Atomic Emission Spectroscopy: Principle01:19

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Inductively coupled plasma (ICP) is the most widely used plasma source in atomic emission spectroscopy (AES), also known as Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES). The ICP source, or torch, consists of three concentric quartz tubes with argon gas flowing through them. A spark from a Tesla coil initiates the ionization of argon, generating a high-temperature plasma.
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Atomic fluorescence spectroscopy (AFS) is an analytical technique that involves the electronic transitions of atoms in a flame, furnace, or plasma being excited by electromagnetic (EM) radiation. When these atoms absorb energy, they become excited and subsequently release energy as they return to their original state. This emitted light, or "fluorescence," is observed at a right angle to the incident beam. Both absorption and emission processes transpire at distinct wavelengths, which...
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Non-equilibrium Microwave Plasma for Efficient High Temperature Chemistry
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Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing.

Sung Kyu Jang1, Woosung Lee1, Ga In Choi1

  • 1Electronic Convergence Material and Device Research Center, Korea Electronics Technology Institute (KETI), Seongnam 13509, Republic of Korea.

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|November 27, 2024
PubMed
Summary
This summary is machine-generated.

Advanced semiconductor manufacturing uses Amorphous Carbon Layer (ACL) masks, but carbon contamination requires plasma cleaning. This study reveals COF3 formation under high-temperature plasma conditions, offering insights for optimizing ACL processes.

Keywords:
amorphous carbon layerfirst-order plus dead time (FOPDT) modelfluorine-based plasmagas temperaturenon-negative matrix factorization (NMF)principal component analysis (PCA)process optimizationtime-of-flight mass spectrometry (ToF-MS)

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Area of Science:

  • Materials Science
  • Plasma Physics
  • Chemical Engineering

Background:

  • Amorphous Carbon Layer (ACL) masks are crucial for high aspect ratio etching in 3D-NAND and DRAM manufacturing.
  • Carbon contamination in ACL deposition chambers necessitates efficient plasma cleaning methods.

Purpose of the Study:

  • To analyze gas species variations during high-temperature plasma cleaning of ACL deposition chambers.
  • To understand the impact of process conditions on gas dynamics and identify key reaction pathways.

Main Methods:

  • Utilized a high-temperature inductively coupled plasma (ICP) system.
  • Employed Time-of-Flight Mass Spectrometry (ToF-MS) for gas species analysis.
  • Applied Principal Component Analysis (PCA) and Non-negative Matrix Factorization (NMF) for data interpretation.
  • Quantified dynamic gas signal changes using the First-Order Plus Dead Time (FOPDT) model.

Main Results:

  • Identified key gas species involved in the plasma cleaning process.
  • Observed the formation of COF3 at elevated gas temperatures and plasma power levels.
  • Indicated the presence of additional reaction pathways under specific high-temperature conditions.

Conclusions:

  • Provided a comprehensive understanding of high-temperature plasma interactions in ACL cleaning.
  • Suggested new strategies for optimizing ACL processes in semiconductor manufacturing.
  • Highlighted the significance of COF3 formation in process optimization.