Voltage-Controlled Bimeron-Torques Switching of In-Plane Magnetization

Area of Science:

• Spintronics
• Materials Science
• Nanotechnology

Background:

• Controlling magnetization in nanodevices is crucial for data storage and logic technologies.
• In-plane magnetization materials offer accessibility but suffer from lower switching efficiency and stability compared to out-of-plane materials.
• Existing methods like spin-transfer torques and spin-orbit torques require higher critical currents for in-plane magnetization switching.

Purpose of the Study:

• To propose and validate a novel mechanism for switching in-plane magnetization using voltage-controlled bimeron-torques.
• To enable ultralow energy consumption in magnetic random-access memory (MRAM).
• To overcome limitations associated with perpendicular magnetization and Joule heating in magnetic devices.

Main Methods:

• Utilizing magnetic bimerons as both spin-angular-momentum carriers and momentum transfer media.
• Investigating the microscopic origins of the bimeron-torque mechanism.
• Demonstrating the mechanism's effectiveness in Co(MoTe_{2})_{2} and HgInP_{2}O_{6} monolayers.

Main Results:

• Magnetic bimerons effectively switch in-plane magnetization.
• The proposed mechanism achieves ultralow energy consumption for MRAM.
• The method avoids Joule heating, a common issue in current spintronic devices.
• Validation through simulations on specific monolayer materials.

Conclusions:

• Voltage-controlled bimeron-torques offer a viable alternative for switching in-plane magnetization.
• This mechanism provides a pathway for developing highly efficient and stable MRAM.
• The approach overcomes key limitations of existing spintronic switching techniques.