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Gradient Echo Quantum Memory in Warm Atomic Vapor

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Published on: November 11, 2013

Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors.

Lukas Seidel¹, Teren Liu², Omar Concepción²

¹Institute of Semiconductor Engineering, University of Stuttgart, 70569, Stuttgart, Germany. lukas.seidel@iht.uni-stuttgart.de.

Nature Communications

|December 3, 2024

Summary

Researchers developed a new continuous-wave, electrically pumped, all-group-IV laser. This breakthrough uses germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn) heterostructures, paving the way for integrated silicon photonics.

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Group-IV semiconductors are crucial for silicon photonics.
Direct bandgap materials are needed for efficient lasers.
Germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn) heterostructures offer tunable band structures.

Purpose of the Study:

To demonstrate an electrically pumped, continuous-wave (CW) all-group-IV laser.
To achieve lasing at a near-infrared wavelength.
To advance the development of silicon photonics.

Main Methods:

Fabrication of a 6-period SiGeSn/GeSn multiple quantum-well heterostructure.
Design and operation of a micro-disk laser.
Characterization of laser performance, including threshold current and emission wavelength.

Main Results:

Demonstrated a versatile, electrically pumped, CW laser emitting at 2.32 µm.
Achieved a low threshold current of 4 mA.
Confirmed potential for operation at liquid nitrogen temperature under pulsed conditions.

Conclusions:

This work presents a major breakthrough in all-group-IV lasers.
The developed laser is a key component for a complete group-IV photonics technology platform.
Enables the integration of lasers directly onto silicon chips.