Related Experiment Video
Updated: May 1, 2026

08:12
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
12.3K
Invisibility concentrator based on van der Waals semiconductor α-MoO3
Tao Hou1, Sicen Tao1, Haoran Mu2
1Department of Physics and Institute of Electromagnetics and Acoustics, Xiamen University, Xiamen 361005, China.
Nanophotonics (Berlin, Germany)
|December 5, 2024
Summary
A novel invisibility concentrator using van der Waals materials offers cloaking and energy focusing. This design, utilizing molybdenum trioxide, simplifies experimental realization for advanced optical devices.
Area of Science:
- Optics and Photonics
- Materials Science
- Condensed Matter Physics
Background:
- Transformation optics enables advanced electromagnetic wave manipulation.
- Van der Waals layered materials offer unique optical properties.
- Invisibility cloaking and energy concentration are key research areas.
Purpose of the Study:
- To propose a novel invisibility concentrator device.
- To leverage van der Waals materials for enhanced optical functionalities.
- To overcome experimental challenges in invisibility device fabrication.
Main Methods:
- Combining transformation optics principles with van der Waals layered materials.
- Utilizing alpha-molybdenum trioxide (α-MoO3) with natural in-plane hyperbolicity.
- Employing analytical calculations and numerical simulations for verification.
Main Results:
- Demonstrated invisibility and energy concentration effects at Fabry-Pérot resonance.
- Achieved minimal scattering, enhancing cloaking performance.
- Confirmed functionalities including invisibility, energy concentration, and illusion effects.
Conclusions:
- The proposed α-MoO3 based invisibility concentrator effectively combines cloaking and focusing.
- Natural hyperbolicity of α-MoO3 resolves experimental complexity and infinite dielectric constant issues.
- The design provides a viable pathway for future experimental verification and applications.
Related Concept Videos
Metal-Semiconductor Junctions
1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Biasing of Metal-Semiconductor Junctions
907
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
907

