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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Related Experiment Video

Updated: Jul 14, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Deuterated SiNx: a low-loss, back-end CMOS-compatible platform for nonlinear integrated optics.

Xavier X Chia¹, Dawn T H Tan^1,2

¹Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road 487372, Singapore, Singapore.

Nanophotonics (Berlin, Germany)

|December 5, 2024

Summary

Deuterated silicon nitride (SiNx:D) enables low-loss photonic-integrated circuits (PICs) using CMOS-compatible fabrication. This advancement overcomes previous trade-offs, paving the way for highly efficient integrated photonic devices.

Keywords:

chemical vapour deposition nonlinear optics photonic-integrated circuits silicon photonics

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Last Updated: Jul 14, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

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Published on: April 4, 2017

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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Area of Science:

Materials Science
Photonics
Semiconductor Manufacturing

Background:

Silicon nitride (SiN) is a key material for photonic-integrated circuits (PICs) due to its transparency and CMOS compatibility.
Existing SiN fabrication methods force a compromise between thermal budget and optical loss.
Parasitic bonds in hydrogenated SiN cause absorption losses at 1.55 µm.

Purpose of the Study:

To review recent advancements in deuterated silicon nitride (SiNx:D) for PICs.
To highlight the benefits of SiNx:D over traditional SiN.
To explore future potential of SiNx:D in integrated photonics.

Main Methods:

Fabrication of SiNx:D films using deuterated precursors via plasma-enhanced chemical vapor deposition (PECVD).
Characterization of optical properties and loss reduction at telecommunication wavelengths.
Assessment of CMOS fabrication compatibility, including low-temperature, back-end-of-line processes.

Main Results:

SiNx:D films exhibit significantly reduced absorption losses near 1.55 µm compared to hydrogenated SiN.
Low-loss PICs are achieved using a low-temperature, CMOS-compatible PECVD process.
The SiNx:D platform demonstrates potential for both linear and nonlinear photonic applications.

Conclusions:

Deuterated silicon nitride (SiNx:D) offers a promising route to low-loss PICs.
This material overcomes limitations of traditional SiN fabrication, enabling simultaneous low loss and low thermal budget.
SiNx:D is poised to be instrumental in developing highly efficient integrated photonic chips, potentially co-packaged with electronics.