Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Temperature-dependent characteristics of GaN-based laser diodes.

Optics express·2026

Same author

MOCVD-grown n-InAs/GaAs heterostructures for tunable mid-IR magneto-optical nonreciprocity.

Optics express·2026

Same author

Determination of fluorinated pesticides in food products: Current advancements and prospective challenges.

Food chemistry·2026

Same author

Intracellular Proton Enrichment Drives Unified Dual-Cofactor Regeneration for Biohybrid CO<sub>2</sub> Fixation.

Angewandte Chemie (International ed. in English)·2026

Same author

Thermal Utilization on Chip.

Light, science & applications·2026

Same author

Effects of polymer type and aging on enrichment of antibiotic resistance genes and pathogens in biofilm on microplastics in biological wastewater treatment.

Journal of environmental management·2026

Same journal

Recent Progress in on-Demand Transfer-Enabled Integration of Wavelength-Scale Light Sources.

Nanophotonics (Berlin, Germany)·2026

Same journal

Tunable skyrmion bag textures in surface phonon polariton lattices.

Nanophotonics (Berlin, Germany)·2026

Same journal

All-Optical Diffractive Operators for Rapid, Computer-Free Morphological Transformations.

Nanophotonics (Berlin, Germany)·2026

Same journal

Tunable Skyrmion, Meron, and Skyrmion Bag Textures in Surface Phonon Polariton Lattices.

Nanophotonics (Berlin, Germany)·2026

Same journal

Deep-Subwavelength Slot-Enhanced Broadband Dynamic Camouflage Metasurface Across the S, C, X, and Ku Bands.

Nanophotonics (Berlin, Germany)·2026

Same journal

Machine Learning-Driven Cooling Window Design Beyond Hyperbolic Metamaterials.

Nanophotonics (Berlin, Germany)·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Jun 5, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Advances in silicon-based, integrated tunable semiconductor lasers.

Changjin Yang^1,2, Lei Liang^1,2,3, Li Qin^1,2,3

¹State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

Nanophotonics (Berlin, Germany)

|December 5, 2024

Summary

This summary is machine-generated.

This review explores silicon-based integrated tunable semiconductor lasers, crucial for silicon photonics. It covers integration methods and linewidth reduction techniques for advanced applications.

Keywords:

heterogeneous integration hybrid integration narrow linewidth silicon nitride silicon photonics tunable semiconductor lasers

More Related Videos

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Related Experiment Videos

Last Updated: Jun 5, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Published on: November 9, 2015

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Area of Science:

Photonics
Materials Science
Electrical Engineering

Background:

Tunable semiconductor lasers are vital for applications like wavelength division multiplexing and gas detection.
Silicon photonics drives the development of miniaturized on-chip tunable lasers, but silicon's poor light emission necessitates integration.
High-performance tunable lasers on silicon require effective light source integration.

Purpose of the Study:

To review silicon-based light source integration methods for tunable lasers.
To discuss the development of silicon-based integrated tunable semiconductor lasers.
To analyze linewidth reduction techniques and future trends in silicon-based integrated photonics.

Main Methods:

Literature review of silicon-based light source integration.
Analysis of existing silicon-based integrated tunable semiconductor laser designs.
Summary of methods for reducing the linewidth of tunable lasers.

Main Results:

Identified key integration strategies for light sources onto silicon platforms.
Detailed the progress in developing silicon-based integrated tunable semiconductor lasers.
Highlighted techniques for achieving narrow-linewidth performance in these devices.

Conclusions:

Silicon-based integrated tunable lasers are advancing rapidly, overcoming silicon's native limitations.
Narrow-linewidth performance is critical for expanding the applications of these integrated lasers.
Future development trends point towards enhanced performance and broader applications of silicon-based integrated photonics.