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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

296
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
296
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

215
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
215

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Broadband mode exchanger based on subwavelength Y-junctions.

Raquel Fernández de Cabo1, Alejandro Sánchez-Sánchez2, Yijun Yang3

  • 1Instituto de Óptica, Consejo Superior de Investigaciones Científicas (CSIC), 28006 Madrid, Spain.

Nanophotonics (Berlin, Germany)
|December 5, 2024
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Summary

This study presents a novel silicon photonics mode exchanger using subwavelength gratings for enhanced on-chip optical interconnects. It achieves broad bandwidth, low loss, and low crosstalk, crucial for advanced photonic applications.

Keywords:
inverse design optimizationmode conversionmultimodesilicon photonicssubwavelength gratingssymmetric Y-junction

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Area of Science:

  • Photonics
  • Nanotechnology
  • Optical Engineering

Background:

  • Multimode silicon photonics, using mode-division multiplexing, enhances optical interconnect capacity for large-scale systems.
  • Applications span telecom, datacom, quantum, and nonlinear photonics.
  • Compact, low-loss, low-crosstalk multimode devices are essential for on-chip mode manipulation.

Purpose of the Study:

  • To introduce a novel, compact mode exchanger for effective on-chip mode manipulation.
  • To leverage subwavelength grating metamaterials and Y-junctions for improved performance.
  • To achieve broad bandwidth, low loss, and low crosstalk in a small footprint.

Main Methods:

  • Design and fabrication of a mode exchanger utilizing subwavelength grating (SWG) metamaterials and symmetric Y-junctions.
  • Integration of SWG nanostructures for precise control of propagation constants.
  • Dispersion engineering to broaden the operational bandwidth.

Main Results:

  • Demonstrated a compact device (6.5 µm × 2.6 µm) with low losses and crosstalk.
  • Achieved the broadest operational bandwidth reported to date, from 1,420 nm to 1,620 nm.
  • Measured losses as low as 0.5 dB and extinction ratios >10 dB across the band, with enhanced performance (<0.4 dB loss, >18 dB extinction ratio) over a 149 nm bandwidth.

Conclusions:

  • The novel mode exchanger offers significant advancements for on-chip optical interconnects.
  • The design enables precise mode manipulation with superior performance metrics.
  • This technology is vital for scaling future photonic systems in diverse applications.