Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

907
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
907

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Design of a CMOS image sensor pixel with embedded polysilicon nano-grating for near-infrared imaging enhancement.

Applied optics·2022
Same author

Critical coupling and extreme confinement in nanogap antennas.

Optics letters·2019
Same author

Influence of Cracks on the Optical Properties of Silver Nanocrystals Supracrystal Films.

ACS nano·2018
Same author

Ultrathin mono-resonant nano photovoltaic device for broadband solar conversion.

Optics express·2018
Same author

Pixel-sized infrared filters for a multispectral focal plane array.

Applied optics·2018
Same author

Correlating Nanoscopic Energy Transfer and Far-Field Emission to Unravel Lasing Dynamics in Plasmonic Nanocavity Arrays.

Nano letters·2018

Related Experiment Video

Updated: May 2, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K

Electrically driven nanogap antennas and quantum tunneling regime.

Claire Deeb1, Johann Toudert2, Jean-Luc Pelouard3

  • 1Almae Technologies, Route de Nozay, 91460 Marcoussis, France.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
Summary

Electrically driven nanogap antennas enable electrical tuning of plasmon resonance and broadband photon emission. This technology holds potential for developing faster on-chip communication systems.

Keywords:
hot carriersinelastic electron tunnelingnanogap antennasphoton emissionquantum regimetunnel junction

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Related Experiment Videos

Last Updated: May 2, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.2K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Area of Science:

  • Plasmonics
  • Nanotechnology
  • Optoelectronics

Background:

  • Nanogap antennas exhibit optical and electrical properties highly sensitive to the nanogap region.
  • Interplay between confined fields, electrons, and photons is crucial in nanogap antennas.

Purpose of the Study:

  • To investigate the electrical tuning of gap plasmon resonance in nanogap antennas.
  • To explore the potential of electron tunneling for broadband photon emission.
  • To assess the feasibility of nanogap antennas for on-chip communication.

Main Methods:

  • Electron injection into the nanogap to open a conductance channel.
  • Modification of plasmon charge distribution via electrical stimulation.
  • Observation of photon emission, including overbias light emission.

Main Results:

  • Electrical injection of electrons tunes the gap plasmon resonance.
  • Electron tunneling induces broadband photon emission with enhanced quantum efficiency.
  • Overbias light emission occurs due to hot electron distribution.

Conclusions:

  • Electrically controlled nanogap antennas offer tunable optical properties.
  • The technology facilitates efficient broadband photon generation.
  • Nanogap antennas show promise for future high-speed on-chip communication.