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Resonant multilevel optical switching with phase change material GST.
Di Wu1, Xing Yang1, Ningning Wang1
1Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Lab of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Nanophotonics (Berlin, Germany)
|December 5, 2024
Summary
This study introduces a novel multilevel optical memristive switch using a silicon Fabry-Perot resonator and germanium-antimony-tellurium (GST) thin film. The device achieves high performance for future nonvolatile silicon photonics applications.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Optical memristive switches are crucial for advanced computing.
- Phase-change materials like Ge2Sb2Te5 (GST) offer nonvolatile switching capabilities.
- Integrating optical resonators can enhance device performance.
Purpose of the Study:
- To demonstrate a multilevel optical memristive switch.
- To leverage a silicon Fabry-Perot resonator for enhanced GST interaction.
- To improve the on-off extinction ratio and switching levels of phase-change devices.
Main Methods:
- Fabrication of a silicon Fabry-Perot resonator with waveguide Bragg gratings.
- Integration of a sub-micrometer Ge2Sb2Te5 (GST) thin film.
- Triggering GST phase transitions using electrical pulses via a microheater.
- Optical characterization of light transmission and absorption.
Main Results:
- Enhanced interaction between optical fields and GST due to resonance.
- Achieved a maximum transmission contrast of 10.29 dB.
- Demonstrated 38 distinct nonvolatile switching levels.
- Higher on-off extinction ratio compared to non-resonant devices.
Conclusions:
- The resonant device significantly improves multilevel switching performance.
- This work offers an effective solution for phase-change devices.
- Paves the way for future nonvolatile silicon photonics devices.
