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An integrated photonic device for on-chip magneto-optical memory reading.

Figen Ece Demirer1, Yngwie Baron2, Sander Reniers2

  • 1Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands.

Nanophotonics (Berlin, Germany)
|December 5, 2024
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Summary

This study introduces a novel magneto-photonic device for non-volatile photonic memory. It enables all-optical reading of magnetic memory states, overcoming electronic-optical conversion bottlenecks for faster data retrieval.

Keywords:
MOKEferromagnetic thin-filmsintegrated photonicsnon-volatile memoryphotonic memorypolarization conversion

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Area of Science:

  • Photonics
  • Spintronics
  • Materials Science

Background:

  • Conventional non-volatile memory retrieval involves energy-intensive electronic-optical signal conversion.
  • Integrated photonic devices offer potential for faster and more efficient data processing.

Purpose of the Study:

  • To design and demonstrate a magneto-photonic device for non-volatile photonic memory.
  • To overcome the speed and energy limitations of current memory retrieval systems.
  • To enable all-optical reading of magnetic memory states.

Main Methods:

  • Fabrication of integrated photonic components on an Indium Phosphide membrane on Silicon (IMOS) platform.
  • Integration of ferromagnetic thin-film multilayers as a top-cladding for non-volatile memory functionality.
  • Engineering light phase using the polar magneto-optical Kerr effect (MOKE) and asymmetrical waveguides.

Main Results:

  • Demonstration of mode-specific transmission changes based on memory state.
  • Successful recording of magnetic hysteresis loops via optical signals.
  • Experimental validation of all-optical magnetic memory reading on an integrated photonic chip.
  • Optical simulations quantitatively reproduced experimental Kerr signal amplitudes.

Conclusions:

  • The developed magneto-photonic device successfully achieves non-volatile photonic memory functionality.
  • The device enables direct, all-optical reading of magnetic memory states, bypassing electronic conversions.
  • Promising results indicate a theoretical read-out bandwidth exceeding 50 Gbits/s.