Micro-transfer printing of O-band InGaAs/InP photodiodes on a silicon nitride photonic platform

Silicon nitride (SiN) photonic platforms offer outstanding optical properties, making them suitable for diverse applications in communications, sensing, and nonlinear/quantum technologies. However, the absence of native active components, such as photodiodes, significantly limits the functionality of these platforms. This work addresses this gap by integrating O-band InGaAs/InP photodiodes onto a low-pressure chemical vapor deposition (LPCVD) SiN photonic platform using micro-transfer printing (μTP). The photodiodes exhibit a low dark current below 38 nA at -2 V bias voltage and a high responsivity of 1 A/W at 1310 nm, facilitated by an efficient waveguide coupling structure. Moreover, the adoption of a modified uni-traveling carrier (MUTC) design enhances the 3-dB bandwidth to 32 GHz, an improvement of 12 GHz compared to a reference PIN photodiode with the same absorber thickness. The photodiodes successfully demonstrated high-speed data reception of non-return-to-zero (NRZ) signals up to 40 Gbps with clear open eye diagrams. The μTP technique holds significant promise for co-integrating photodiodes with other active components, paving the way for multifunctional SiN-based PICs for next-generation data communications, interconnects, and on-chip signal processing.