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Diamagnetic Carrier-Doping-Induced Continuous Electronic and Magnetic Crossover in One-Dimensional Coordination
Yongbing Shen1,2, Mengxing Cui3, Guanping Li1,4
1Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
Journal of the American Chemical Society
|December 12, 2024
Summary
Carrier doping in one-dimensional coordination polymers enables tunable conductivity and magnetism for nanoelectronics. This study demonstrates continuous electronic and magnetic property changes with increasing doping levels, paving the way for novel magnetic semiconductors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Metal-organic coordination polymers offer potential for tunable electrical conductivity and molecular magnetism.
- Precise control over carrier doping is crucial for tailoring electronic and magnetic properties in these materials.
Purpose of the Study:
- To investigate the effects of diamagnetic Cu1+ carrier doping on the electronic and magnetic properties of one-dimensional coordination polymers.
- To explore the potential of these doped polymers for nanoelectronics applications.
Main Methods:
- Synthesis of a series of one-dimensional coordination polymers, {(HNEt3)0.5[CuxCo(1-x)(L)]}, with varying doping levels (x).
- Comprehensive characterization including structural, optical, and magnetic property analysis.
Main Results:
- Observed continuous electronic and magnetic crossovers with increasing doping levels.
- Ferromagnetic insulating behavior with high energy barriers and slow magnetization relaxation for x < 0.5.
- Paramagnetic semiconductor to single-molecule magnet transition at x = 0.5.
- Diluted antiferromagnetic semiconductor behavior with narrow band gaps for x > 0.5.
Conclusions:
- One-dimensional coordination polymers exhibit rich electronic and magnetic crossovers due to ligand effects and crystal-field interactions.
- These materials are promising for the development of novel low-dimensional magnetic semiconductors for advanced applications.
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