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Processing of Bulk Nanocrystalline Metals at the US Army Research Laboratory

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Published on: March 7, 2018

Enhancing Field-Like Efficiency Via Interface Engineering with Sub-Atomic Layer Ta Insertion.

Shuanghai Wang^1,2, Kun He^1,2, Caitao Li^1,2

¹School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|December 16, 2024

Summary

Interface engineering in Pt-Co structures significantly boosts field-like efficiency, drastically reducing critical current density for energy-efficient spintronic devices.

Keywords:

field‐like efficiency interface engineering interfacial rashba effect perpendicular magnetic anisotropy spin‐orbit torque

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Area of Science:

Spintronics
Materials Science
Condensed Matter Physics

Background:

Research traditionally focused on damping-like efficiency (βDL) to lower critical switching current density (Jc).
Field-like efficiency (βFL) is increasingly recognized for its significant role in reducing Jc.

Purpose of the Study:

To enhance central inversion asymmetry in Pt-Co via interface engineering.
To investigate the impact of Ta interlayers on βFL and Jc in spintronic heterostructures.

Main Methods:

Interface engineering using sub-atomic Ta layers in Pt-Co multilayers.
Fabrication of Ta/Pt/Ta (0.3 nm insertion)/Co/Ta structures.
Measurement and analysis of βFL and Jc.

Main Results:

Achieved a 123% increase in βFL, from -1.66 to -3.8 Oe/(MA cm⁻²).
Reduced Jc by over 90% in the engineered Ta/Pt/Ta/Co/Ta structure compared to Ta/Pt/Co/Ta.
Demonstrated a significantly low Jc of 2.7 MA cm⁻².

Conclusions:

Interface engineering is a powerful strategy to enhance βFL and minimize Jc.
The findings enable the development of more efficient and lower-power spin-orbit torque (SOT)-based spintronic devices.
Further interface optimization holds potential for substantial improvements in device performance and energy savings.