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P-type doping in edge-enriched MoS2- nanostructures via RF-generated nitrogen plasma
Khomdram Bijoykumar Singh1,2, Jyotisman Bora1, Bablu Basumatary1,3
1Plasma Nanotechnology Laboratory, Physical Sciences Division, Institute of Advanced Study in Science and Technology (IASST), Guwahati-781035, India. arpal@iasst.gov.in.
Nanoscale
|December 17, 2024
Summary
Magnetron sputtering offers a versatile method for creating vertically aligned molybdenum disulfide (MoS2) nanostructures. Plasma-based nitrogen doping effectively modifies MoS2
Area of Science:
- Materials Science
- Nanotechnology
- Surface Science
Background:
- Vertically aligned 2D nanomaterials, such as molybdenum disulfide (MoS2), offer unique properties for various applications.
- Controlling the morphology and doping of these nanostructures is crucial for optimizing their performance.
- Magnetron sputtering presents a scalable technique for synthesizing tailored nanomaterials.
Purpose of the Study:
- To develop an intuitive magnetron sputtering technique for synthesizing vertically aligned MoS2 (v-MS) nanostructures.
- To investigate a plasma-based nitrogen doping method for p-type modification of v-MS with minimal damage.
- To analyze the impact of doping on the work function and surface integrity of v-MS.
Main Methods:
- Synthesis of v-MS nanostructures using magnetron sputtering with adjustable parameters.
- Nitrogen doping of v-MS using radio frequency (RF) plasma discharge.
- Characterization techniques including field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), ultraviolet photoelectron spectroscopy (UPS), and optical emission spectroscopy (OES).
Main Results:
- Magnetron sputtering allows for controlled synthesis of edge-enriched, vertically aligned MoS2 nanostructures.
- Plasma-based nitrogen doping successfully introduced nitrogen into v-MS, confirmed by Raman and XPS.
- AFM and OES indicated minimal surface damage during the doping process.
- KPFM and UPS demonstrated a significant alteration of the work function in nitrogen-doped v-MS.
Conclusions:
- Magnetron sputtering is a versatile technique for producing tunable, vertically aligned MoS2 nanostructures.
- Plasma-based nitrogen doping is an effective method for p-type doping of MoS2, leading to work function modification with minimal structural damage.
- The developed methods provide pathways for advanced applications of MoS2 in optoelectronics, catalysis, and energy storage.
