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Is Semiconducting Transition-Metal Dichalcogenide Suitable for Spin Pumping?

Bin Lu1,2, Yue Niu1, Qian Chen1

  • 1Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China.

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|December 17, 2024
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Summary
This summary is machine-generated.

This study finds that semiconducting transition-metal dichalcogenides (TMDs) are unsuitable for spin pumping, contrary to previous reports. Experiments show no significant spin pumping effect at CoFeB/MoSe2 interfaces, suggesting extrinsic factors in prior research.

Keywords:
ferromagnetic resonanceinterfacemolecular beam epitaxyspin pumpingtransition-metal dichalcogenide

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Spin pumping is a phenomenon where spin current is generated at ferromagnetic material interfaces.
  • Enhanced Gilbert damping in ferromagnetic metal/transition-metal dichalcogenide (TMD) interfaces has been attributed to spin pumping.
  • The precise contribution of spin pumping versus extrinsic factors in these interfaces remains debated.

Purpose of the Study:

  • To investigate the presence and magnitude of spin pumping at an atomically clean interface between a ferromagnetic metal (CoFeB) and a layered transition-metal dichalcogenide (MoSe2).
  • To clarify whether observed damping enhancements in similar systems are due to intrinsic spin pumping or extrinsic experimental artifacts.

Main Methods:

  • Fabrication of an atomically clean CoFeB/MoSe2 interface using an all-in-situ molecular beam epitaxy growth strategy.
  • Utilizing ferromagnetic resonance (FMR) analysis to measure magnetodynamics and extract Gilbert damping parameters.
  • Comparison of damping parameters between CoFeB/MoSe2 and control CoFeB/SiO2 interfaces.

Main Results:

  • The Gilbert damping parameter of the CoFeB/MoSe2 interface was found to be similar to that of the CoFeB/SiO2 control interface.
  • This similarity indicates the absence of a significant spin pumping effect at the CoFeB/MoSe2 interface.
  • Similar results were observed for other representative interfaces, reinforcing the main finding.

Conclusions:

  • Semiconducting transition-metal dichalcogenides (TMDs) are not suitable for efficient spin pumping.
  • Observed damping enhancements in previous studies on ferromagnetic metal/TMD interfaces are likely dominated by extrinsic contributions.
  • This work provides critical clarification on the mechanisms underlying damping in spintronic heterostructures.