Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

212
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
212
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

292
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
292
Schottky Barrier Diode01:27

Schottky Barrier Diode

293
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
293
Types of Semiconductors01:20

Types of Semiconductors

525
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
525
P-N junction01:11

P-N junction

464
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
464
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

519
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
519

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Diazo-6Bx, a Six-Branched Diazo Cross-Linker, Enables High-Fidelity Patterning for Solution-Processed Electronics with Stable Operation.

ACS nano·2026
Same author

Effects of perilla oil on platelet and inflammatory responses in healthy smokers: a randomized, double-blind, placebo-controlled, parallel trial.

Food & function·2026
Same author

Cellular Senescence of Patient-derived Fibroblasts Reveals the Mid-old Stage as a Critical Window for Transcriptomic Signatures Linked to Alzheimer's Disease Biomarkers and Classification.

Clinical psychopharmacology and neuroscience : the official scientific journal of the Korean College of Neuropsychopharmacology·2026
Same author

Low breakdown field and high ionization index in ReSe<sub>2</sub> avalanche field-effect transistors.

Nature communications·2026
Same author

Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability.

ACS applied materials & interfaces·2026
Same author

Volumetric Deep Learning-Based Precision Phenotyping of Gene-Edited Tomato for Vertical Farming.

Plant phenomics (Washington, D.C.)·2025

Related Experiment Video

Updated: Jun 4, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K

Electron-Beam-Induced Negative Differential Transconductance Homojunction Device Based on van der Waals Materials for

Maksim Andreev1, Juncheol Kang1, Taeran Lee1

  • 1Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.

ACS Nano
|December 18, 2024
PubMed
Summary

Researchers developed novel tungsten diselenide (WSe2) homojunction devices using electron beams for advanced ternary logic computing. This breakthrough enables a complete set of ternary logic gates, overcoming limitations in multivalued logic systems.

Keywords:
electron beamfunctionally complete gate sethomojunctionmultivalued logicnegative differential transconductanceternary NAND and NORvan der Waals materials

More Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

Related Experiment Videos

Last Updated: Jun 4, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.5K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.6K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Negative differential transconductance (NDT) devices are key for multivalued logic, especially ternary computing.
  • Current NDT technologies lack a functionally complete set of ternary logic gates, hindering circuit design.
  • NDT devices often use complex heterojunctions, impacting fabrication and reliability.

Purpose of the Study:

  • To engineer W-shaped current-voltage (I-V) characteristics in tungsten diselenide (WSe2) homojunction NDT devices.
  • To demonstrate the creation of a functionally complete set of ternary logic gates for practical ternary computing.
  • To showcase electron beam treatment as a versatile tool for tailoring 2D material properties.

Main Methods:

  • Utilized electron beam to precisely manipulate Selenium atoms in WSe2, creating lateral homojunctions.
  • Developed W-shaped I-V characteristics in WSe2 NDT devices.
  • Designed and implemented balanced circuits for ternary NAND, AND, NOR, and OR gates, alongside ternary inverters.

Main Results:

  • Achieved W-shaped I-V curves in WSe2 homojunction NDT devices via electron beam treatment.
  • Demonstrated the capability for both one-input and two-input ternary logic gates.
  • Successfully created a functionally complete set of ternary logic gates, including inverters and two-input gates.

Conclusions:

  • Electron beam treatment offers precise control over WSe2 work function for NDT device engineering.
  • The developed ternary logic gates form a functionally complete set, addressing a critical gap for ternary computing.
  • This work highlights the potential of electron beam lithography for advanced 2D material-based electronic devices.