Halide Perovskite Photodiode Integrated CMOS Imager

Area of Science:

• Optoelectronics
• Materials Science
• Semiconductor Devices

Background:

• Thin-film photodiodes (TFPDs) offer unique optoelectronic properties and monolithic processability, complementing traditional CMOS image sensors.
• Halide perovskites exhibit excellent optoelectronic characteristics, including high absorption coefficients, long carrier diffusion lengths, and high carrier mobility, making them promising for photodiode applications.

Purpose of the Study:

• To demonstrate high-resolution 2D and 3D imaging capabilities using perovskite photodetecting material integrated with a silicon read-out integrated circuit (ROIC).
• To leverage the fast charge transport properties of perovskite photodiodes (PePDs) for advanced depth sensing applications.

Main Methods:

• Integration of perovskite photodiode material onto a silicon ROIC to create a hybrid imaging sensor.
• Implementation of a top-electrode controlled indirect time-of-flight (iToF) operation for 3D imaging, utilizing the fast switching capabilities of the TFPD pixel.

Main Results:

• Achieved high-resolution 2D imaging through the integration of PePDs on Si ROIC.
• Demonstrated depth sensing capabilities enabled by the fast carrier transport properties of the PePD.
• Successfully implemented 3D imaging using the iToF method, showcasing the sensor's potential for spatial awareness.

Conclusions:

• Perovskite photodiodes on Si ROIC represent a significant advancement for TFPD imaging platforms, combining excellent optoelectronic performance with CMOS technology.
• This hybrid technology enables not only conventional 2D imaging but also advanced 3D sensing.
• Potential applications include automotive systems, augmented reality (AR), and virtual reality (VR) due to enhanced imaging and depth perception capabilities.