Growth-based monolithic 3D integration of single-crystal 2D semiconductors

Area of Science:

• Materials Science
• Semiconductor Physics
• Nanotechnology

Background:

• The demand for 3D integration of electronic components is growing.
• Through-silicon-via (TSV) is a current method for 3D integration, but faces challenges.
• Monolithic 3D (M3D) integration promises seamless connections but lacks a practical growth method for single crystals on processed wafers.

Purpose of the Study:

• To develop a low-temperature growth method for single-crystalline channel materials on amorphous/polycrystalline surfaces.
• To demonstrate the monolithic 3D integration of vertical single-crystalline logic transistor arrays.
• To enable the fabrication of novel vertical complementary metal-oxide-semiconductor (CMOS) arrays.

Main Methods:

• Developed a novel technique for growing single-crystalline transition metal dichalcogenides at low temperatures.
• Applied the growth method to amorphous and polycrystalline surfaces, preserving underlying circuitry.
• Fabricated and demonstrated vertical single-crystalline logic transistor arrays and CMOS arrays.

Main Results:

• Successfully grew single-crystalline channel materials on challenging surfaces at low temperatures.
• Achieved seamless monolithic integration of vertical single-crystalline logic transistor arrays.
• Demonstrated unprecedented vertical CMOS arrays using grown single-crystalline channels.

Conclusions:

• The developed growth technique overcomes limitations in M3D integration of single crystals.
• This method facilitates the 3D integration of various electronic components as single crystals.
• Opens new avenues for advanced 3D electronic hardware and semiconductor device architectures.