Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Reprogramming of TLR-Ferroptosis Signaling and Immunometabolic Pathways Overcomes Myeloid Suppression to Improve Checkpoint Blockade in Prostate Cancer.

Cancer research·2026

Same author

Governing Thermal Transport in Three-Dimensional Electronics.

ACS nano·2026

Same author

Overcoming Boltzmann's Tyranny in All-Metal-Oxide Negative Capacitance Field-Effect Transistor.

ACS nano·2026

Same author

Plasmonic Supercavitation Enables Nanoparticle Photo-Ejection Across Air/Water Interface.

Small science·2026

Same author

<i>PDK4</i> as a metabolic biomarker of chronic hydrocephalus.

Frontiers in genetics·2026

Same author

Harnessing Quantum Computing for Energy Materials: Opportunities and Challenges.

ACS energy letters·2026

Search research articles

Related Experiment Video

Updated: Jun 4, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Machine Learning Strategy for Optimizing Multiple Electrical Characteristics in Dual-Layer Oxide Thin Film

Wonho You^1,2, Jiho Lee³, Chan Lee³

¹Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, 1, Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea.

ACS Applied Materials & Interfaces

|December 23, 2024

Summary

Machine learning optimizes dual-layer oxide thin film transistors (TFTs) by fine-tuning sputtering conditions. This strategy significantly enhances field-effect mobility, optimizes threshold voltage, and improves subthreshold swing for better performance and reduced power consumption.

Keywords:

Bayesian optimization dual layer TFT machine learning oxide thin film transistor sputter process

More Related Videos

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Related Experiment Videos

Last Updated: Jun 4, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

Materials Science
Electrical Engineering
Computer Science

Background:

Dual-layer oxide thin film transistors (TFTs) are crucial for electronic devices.
Optimizing TFT performance requires intricate control over fabrication processes.
Existing methods for TFT optimization are often time-consuming and complex.

Purpose of the Study:

To develop a machine learning (ML) strategy for optimizing dual-layer oxide TFT performance.
To apply Bayesian optimization (BO) for guiding the design of IZO and IGZO channel layers.
To enhance key electrical characteristics: field-effect mobility, threshold voltage, and subthreshold swing.

Main Methods:

Utilized Bayesian optimization (BO) to fine-tune sputtering fabrication conditions.
Modified plasma power, pressure, and gas ratio based on 19 data sets (84 scenarios).
Focused on optimizing IZO/IGZO channel layer deposition for enhanced transistor performance.

Main Results:

Achieved field-effect mobility up to 46.7 cm²V^-1s^-1, more than doubling conventional IGZO TFT performance.
Optimized threshold voltage to zero, significantly improving transistor stability.
Considerably improved subthreshold swing, leading to reduced power consumption.

Conclusions:

ML-driven optimization accelerates the design process for semiconductor devices.
The proposed ML strategy effectively manages complex correlations between process parameters, properties, and performance.
This approach sets a precedent for the rapid optimization of advanced electronic components.