ATLAS-MAP: An Automated Test Station for Gated Electronic Transport Measurements

Area of Science:

• Materials Science
• Electrical Engineering
• Device Physics

Background:

• The increasing variety of electronic materials necessitates efficient methods to link device fabrication with performance.
• Field-effect transistors (FETs) are crucial components in modern electronics, requiring precise characterization.

Purpose of the Study:

• To present a low-cost, automated test station for gated electronic transport measurements of FETs.
• To enable rapid correlation between fabrication parameters and device performance.

Main Methods:

• Development of the "ATLAS-MAP" system using open-source PyMeasure libraries for instrument control.
• Implementation of transfer curve and van der Pauw measurement methods with static and sweeping gate voltages.
• Fabrication of zinc oxide (ZnO) transistors with varying thicknesses and channel dimensions for validation.

Main Results:

• Successful validation of the ATLAS-MAP system using ZnO transistors.
• Demonstration of automated data analysis through standardized testing procedures and data formatting.
• Provision of a detailed parts list and code for system replication.

Conclusions:

• The ATLAS-MAP system offers a cost-effective and customizable solution for automated FET characterization.
• This automated approach accelerates the design-fabrication-testing cycle for electronic materials.
• The open-source nature promotes accessibility and further development in electronic device testing.