Heterogeneous integration of GaInAsSb-GaSb photodiodes on SOI photonic integrated circuits for SWIR applications

We demonstrate the heterogeneous integration of GaInAsSb-GaSb photodiodes on 220 nm SOI photonic integrated circuits (PICs) using the micro-transfer-printing (μTP) technology, for operation in the short-wave infrared (SWIR) wavelength region. Utilizing an evanescent coupling scheme between a silicon waveguide and a III-V structure, the device exhibits a room temperature responsivity of 1.23 and 1.25 A/W at 2.3 and 2.45 μm, respectively. This enables the realization of photonic integrated circuits for SWIR applications.