Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

525
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
525
Predicting Molecular Geometry02:27

Predicting Molecular Geometry

34.1K
VSEPR Theory for Determination of Electron Pair Geometries
34.1K
Fermi Level01:18

Fermi Level

485
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
485
Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

Crystal Field Theory - Tetrahedral and Square Planar Complexes

41.4K
Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
41.4K
Band Theory02:35

Band Theory

14.9K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
14.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Bayesian Optimization with Gaussian Processes Assisted by Deep Learning for Material Designs.

The journal of physical chemistry letters·2025
Same author

Enhanced Field-Like Torque Generated from the Anisotropic Spin-Split Effect in Triple-Domain RuO<sub>2</sub> for Energy-Efficient Spin-Orbit Torque Magnetic Random-Access Memory.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2025
Same author

Universal Polaronic Behavior in Elemental Doping of MoS<sub>2</sub> from First-Principles.

ACS nano·2024
Same author

Size-Dependent Isovalent Impurity Doping for Ambipolar Control in Cu<sub>3</sub>N.

Journal of the American Chemical Society·2024
Same author

Giant impurity effect on anomalous Hall effect of Mn3Sn.

The Journal of chemical physics·2024
Same author

Emergence of Dynamically-Disordered Phases During Fast Oxygen Deintercalation Reaction of Layered Perovskite.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2023

Related Experiment Video

Updated: Jun 4, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.1K

Exploring Intrinsic and Extrinsic p-Type Dopability of Atomically Thin β-TeO2 from First Principles.

Rafael Costa-Amaral1, Soungmin Bae1, Thi Ngoc Huyen Vu1

  • 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.

ACS Applied Materials & Interfaces
|December 26, 2024
PubMed
Summary

Intrinsic defects do not explain p-type conductivity in 2D β-TeO₂. Instead, hole conduction may arise from impurity states or substrate effects, with Bi showing promise as a dopant.

Keywords:
2D materialsdensity-functional theorydopingp-type conductivitypoint defectsβ-TeO2

More Related Videos

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties
11:07

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

Published on: August 15, 2015

9.8K
Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.2K

Related Experiment Videos

Last Updated: Jun 4, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.1K
Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties
11:07

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

Published on: August 15, 2015

9.8K
Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • Two-dimensional (2D) β-TeO₂ is a transparent material with high hole mobility, making it attractive for optoelectronic and power devices.
  • The fundamental mechanisms governing its p-type conductivity and dopability are not well understood.
  • Understanding these mechanisms is crucial for optimizing its performance in electronic applications.

Purpose of the Study:

  • To investigate the role of intrinsic and extrinsic point defects in the p-type conductivity of monolayer and bilayer β-TeO₂.
  • To explore potential dopants for achieving p-type conductivity in 2D β-TeO₂.
  • To elucidate the mechanisms responsible for hole conduction in this material.

Main Methods:

  • Utilized the Heyd-Scuseria-Ernzerhof (HSE) + D3 hybrid functional for theoretical calculations.
  • Studied intrinsic and extrinsic point defects in both monolayer and bilayer β-TeO₂.
  • Investigated substitutional doping with ten trivalent elements.

Main Results:

  • Most intrinsic defects do not contribute to p-type doping in 2D β-TeO₂.
  • Silicon and hydrogen contamination can degrade p-type conductivity.
  • Hole conduction is likely due to hopping via localized impurity states or substrate effects.
  • Bismuth (Bi) shows a shallow acceptor level, but all dopants create deep localized states.
  • Monolayer β-TeO₂ offers advantages over bilayers due to reduced self-compensation.

Conclusions:

  • Intrinsic defects are not the primary source of p-type conductivity in 2D β-TeO₂.
  • Alternative mechanisms like hopping conduction and substrate effects are proposed.
  • Bismuth doping is a potential route, but defect states need careful management.
  • Monolayer 2D β-TeO₂ is promising for p-type doping due to reduced self-compensation, offering a pathway for defect engineering in electronic devices.