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Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
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Silica Waveguide Thermo-Optic Mode Switch with Bimodal S-Bend.

Zhentao Yao1, Manzhuo Wang1, Yue Zhang1

  • 1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, No. 2699 Qianjin Street, Changchun 130012, China.

Nanomaterials (Basel, Switzerland)
|December 27, 2024
PubMed
Summary

This study demonstrates a novel silica waveguide thermo-optic mode switch using multimode S-bends for efficient on-chip mode routing. The device achieves high extinction ratios and low crosstalk for both E11 and E21 modes, proving its practical potential.

Keywords:
integrated opticsmode switchsilica waveguidethermo-optic

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Area of Science:

  • Photonics and Optical Engineering
  • Integrated Optics
  • Waveguide Devices

Background:

  • On-chip optical mode manipulation is crucial for advanced photonic integrated circuits.
  • Thermo-optic switches offer a viable mechanism for controlling light propagation in waveguides.
  • Developing compact and efficient mode switches is essential for miniaturizing photonic devices.

Purpose of the Study:

  • To demonstrate a silica waveguide thermo-optic mode switch utilizing small-radius bimodal S-bends.
  • To implement selective output for E11 and E21 modes using a cascaded multimode interference coupler.
  • To evaluate the performance of the designed mode switch through detailed characterization.

Main Methods:

  • Design optimization using the beam propagation method.
  • Fabrication using standard CMOS processes: ultraviolet photolithography, chemical vapor deposition, and plasma etching.
  • Characterization of the thermo-optic mode switch performance, including extinction ratio and crosstalk.

Main Results:

  • Achieved high extinction ratios (≥13.1 dB for E11, ≥15.5 dB for E21) and low crosstalk (≤-22.8 dB for E11, ≤-18.1 dB for E21) over a wavelength range of 1530-1575 nm.
  • Demonstrated efficient mode-selective output for both E11 and E21 modes at low electrical driving powers (284.8 mW and 282.4 mW, respectively).
  • Precise fabrication confirmed through detailed characterization of the prepared switch.

Conclusions:

  • The study validates the feasibility of employing multimode S-bends for effective thermo-optic mode switching.
  • The demonstrated silica waveguide mode switch exhibits favorable performance characteristics.
  • The device shows significant potential for future on-chip mode routing applications in photonic integrated circuits.