Related Experiment Video
Updated: Jul 2, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Strained two-dimensional tungsten diselenide for mechanically tunable exciton transport
Jin Myung Kim1,2, Kwang-Yong Jeong3, Soyeong Kwon2
1Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA.
Abstract:
Tightly bound electron-hole pairs (excitons) hosted in atomically-thin semiconductors have emerged as prospective elements in optoelectronic devices for ultrafast and secured information transfer. The controlled exciton transport in such excitonic devices requires manipulating potential energy gradient of charge-neutral excitons, while electrical gating or nanoscale straining have shown limited efficiency of exciton transport at room temperature. Here, we report strain gradient induced exciton transport in monolayer tungsten diselenide (WSe2) across microns at room temperature via steady-state pump-probe measurement. Wrinkle architecture enabled optically-resolvable local strain (2.4%) and energy gradient (49 meV/μm) to WSe2. We observed strain gradient induced flux of high-energy excitons and emission of funneled, low-energy excitons at the 2.5 μm-away pump point with nearly 45% of relative emission intensity compared to that of excited excitons. Our results strongly support the strain-driven manipulation of exciton funneling in two-dimensional semiconductors at room temperature, opening up future opportunities of 2D straintronic exciton devices.
More Related Videos
Related Concept Videos
MALDI-TOF Mass Spectrometry
Double Resonance Techniques: Overview
Spin decoupling is usually achieved by...
The Electrical Double Layer
Electro-mechanical Systems
A key component of the DC motor is the armature, a rotating circuit positioned within a magnetic field. As an electric current passes through the...
Generator Voltage Control
Bioreactor Controls-II

