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An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible
Arpita Roy1, Subhendu Dhibar2, Saurav Kumar1
1Department of Physics, Indian Institute of Technology, Patna, 801106, Bihar, India.
Scientific Reports
|December 31, 2024
Summary
A novel supramolecular nickel(II) metallogel (NiA-TA) was synthesized using benzene-1,3,5-tricarboxylic acid. This metallogel exhibits promising properties for advanced electronic applications, including resistive random access memory (RRAM) and logic gates.
Area of Science:
- Materials Science
- Supramolecular Chemistry
- Nanotechnology
Background:
- Development of novel materials for advanced electronic applications is crucial.
- Metallogels offer unique properties for electronic devices.
- Low molecular weight gelators (LMWGs) are versatile building blocks for supramolecular materials.
Purpose of the Study:
- To synthesize and characterize a supramolecular metallogel of Ni(II) ions (NiA-TA).
- To investigate the material's structural, mechanical, and electronic properties.
- To explore the potential of NiA-TA in electronic devices like RRAM and logic gates.
Main Methods:
- Synthesis of Ni(II)-metallogel using benzene-1,3,5-tricarboxylic acid in DMF.
- Rheological studies for mechanical property assessment.
- Microscopy (FESEM, TEM) for structural analysis.
- Spectroscopy (EDX, FTIR, XPS) for composition and mechanism insights.
- Fabrication and testing of Schottky diodes and RRAM devices.
Main Results:
- Successful synthesis of NiA-TA metallogel with a rocky network structure.
- Demonstrated thixotropic behavior and notable charge transport properties.
- NiA-TA based RRAM devices showed bipolar switching (ON/OFF ratio ~110) and high durability (>5000 cycles).
- Logic gate circuits were successfully designed using a crossbar array.
Conclusions:
- Ni(II)-metallogels are effective for creating functional supramolecular materials.
- NiA-TA exhibits excellent performance for non-volatile memory and logic operations.
- The material's properties suggest potential for neuromorphic computing, flexible electronics, and optoelectronics.
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