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Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

Jaewook Yoo1, Seohyeon Park1, Hongseung Lee1

  • 1Department of Electronic Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea.

ACS Applied Materials & Interfaces
|December 31, 2024
PubMed

Keywords:
Arrhenius plotHooge mobility fluctuationchannel resistancecopper(I) oxide semiconductorlow-frequency noisescatteringtransmission line method (TLM)

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