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Published on: July 12, 2017
Development of a 300 kV/3 kHz nanosecond pulse generator using semiconductor opening switches
Yu-Hao Chen1, Jie Yang1, Yan-Zhao Xie1
1State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
Abstract:
In this paper, we present the development of a nanosecond pulse generator utilizing semiconductor opening switches (SOS), designed to deliver high voltage and operate at a high repetitive frequency. The pulse generator comprises three main components: a primary charging unit, a magnetic pulse compression unit, and an SOS magnification unit. To ensure stable operation of the high-power charging unit at high repetitive frequencies, a rectifying resonant charging and energy recovery circuit are implemented, providing a 1 kV charging voltage at a 3 kHz repetition rate. The three-stage magnetic pulse compression is designed to reduce the pulse width from tens of microseconds to tens of nanoseconds, where self-demagnetization could be completed during repetitive frequency operation. To achieve an output voltage of 300 kV, multiple SOS switches are employed in a series. The developed pulse generator achieves a final output of 300 kV with a 3 kHz repetitive frequency under a load of 2 kΩ. Furthermore, the effects of multiple factors on the output performance are characterized by both simulation and measurement for a comprehensive analysis.
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