Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

699
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
699
Field Effect Transistor01:29

Field Effect Transistor

296
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
296
Biasing of FET01:22

Biasing of FET

216
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
216
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

284
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
284
Ferromagnetism01:31

Ferromagnetism

2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
MOSFET01:16

MOSFET

417
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
417

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Molecular bridge engineering in covalent organic frameworks for enhanced electronic transport.

Nature communications·2026
Same author

Fully integrated photoacoustic microscopy for multi-scale and longitudinal imaging in translational biomedical applications.

Biomedical optics express·2026
Same author

Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Synergistic Pyroelectric-Bolometric Coupling in Tellurene Nanowire for Energy-Efficient Artificial Vision.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Fabrication of optically transparent ultrasound transducers to integrate light and sound in multimodal biomedical systems.

Nature protocols·2026
Same author

Label-free optical microscopy with artificial intelligence: a new paradigm in pathology.

Biophotonics discovery·2026
Same journal

Engineered Young Brown Adipose Tissue-Derived Exosomes Alleviate Radiation-Induced Lung Injury by Promoting G Protein-Coupled Receptor 183 Ubiquitination.

ACS nano·2026
Same journal

Pore Geometry-Driven Capture of Trace Aromatic Volatile Organic Compounds in Al-Based MOFs.

ACS nano·2026
Same journal

Dual-Bridged Porphyrin-Based Covalent Organic Framework with Integrated Specific Fluorescent Recognition and Cooperative Adsorption Capabilities.

ACS nano·2026
Same journal

Split-Gate Memtransistors for Energy-Efficient Adaptive Reinforcement Learning.

ACS nano·2026
Same journal

Interface Coordination Nucleation of Copper Nanoclusters on Covalent Organic Frameworks for Electrocatalytic Ammonia Synthesis.

ACS nano·2026
Same journal

High-Performance Near-Infrared Quantum Emission from Color Centers in hBN.

ACS nano·2026
See all related articles

Related Experiment Video

Updated: Jun 4, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K

Reconfigurable Sequential-Logic-in-Memory Implementation Utilizing Ferroelectric Field-Effect Transistors.

Jingjie Niu1,2, Donggyu Kim3, Jie Li4

  • 1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.

ACS Nano
|January 2, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a novel nonvolatile logic-in-memory unit using van der Waals ferroelectric field-effect transistors (FeFETs). This compact device integrates sequential logic and memory, significantly reducing power consumption for edge computing applications.

Keywords:
ferroelectric field-effect transistorin-memory computinglow-power edge-computing devicessequential-logic-in-memoryvan der Waals ferroelectric materials

More Related Videos

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K

Related Experiment Videos

Last Updated: Jun 4, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Conventional digital systems separate logic and memory, leading to complexity and energy inefficiency.
  • Volatile and nonvolatile memory components in sequential systems contribute to high static power consumption.
  • Edge computing demands compact, energy-efficient solutions for data processing and storage.

Purpose of the Study:

  • To propose a novel, compact, nonvolatile, and reconfigurable sequential logic-in-memory (S-LiM) unit.
  • To integrate sequential logic and memory functions into a single van der Waals (vdW) ferroelectric field-effect transistor (FeFET) device.
  • To demonstrate the potential for low-power, high-density edge computing.

Main Methods:

  • Development of a vdW FeFET-based S-LiM unit.
  • Implementation of six distinct logic operations via voltage-controlled ferroelectric polarization.
  • Evaluation of nonvolatile state retention and rapid recovery after power cycling.

Main Results:

  • The S-LiM unit successfully performs sequential logic operations in two nonvolatile states.
  • Integration of logic and memory eliminates data transfer overhead, reducing static power.
  • The device demonstrates nonvolatile state retention, enabling rapid startup after extended power-off periods.

Conclusions:

  • The vdW FeFET-based S-LiM unit offers a pathway to next-generation, low-power electronics.
  • This innovation is ideal for energy-efficient, high-density edge computing, particularly in remote or power-unstable environments.
  • The reconfigurable nature and nonvolatile memory capabilities enhance efficiency and storage density.