Related Experiment Video
Updated: May 7, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Floquet-Driven Crossover from Density-Assisted Tunneling to Enhanced Pair Tunneling
Nick Klemmer1, Janek Fleper1, Valentin Jonas1
1Physikalisches Institut, <a href="https://ror.org/041nas322">University of Bonn</a>, 53115 Bonn, Germany.
Abstract:
We investigate the experimental control of pair tunneling in a double-well potential using Floquet engineering. We demonstrate a crossover from a regime with density-assisted tunneling to dominant pair tunneling by tuning the effective interactions. Furthermore, we show that the pair tunneling rate can be enhanced not only compared to the Floquet-reduced single-particle tunneling but even beyond the static superexchange rate, while keeping the effective interaction in a relevant range. This opens possibilities to realize models with explicit pair tunneling in ultracold atomic systems.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

