Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Retinomorphic Visual Processing Enabled by Contact-Engineered IGZO Optoelectronic Synaptic Memtransistors.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same author

Computational carrier dynamics across heterojunction interface between hole injection and transport layers in quantum-dot light-emitting diodes.

Scientific reports·2026

Same author

Intrinsically stretchable large-area pixelated electrochromic displays via direct photopatterning.

Nature communications·2026

Same author

Retinocortical in-sensor neuromorphic vision platform for NIR-augmented artificial vision.

Nature communications·2026

Same author

Thalamostriatal circuit as a therapeutic target of alcohol use disorder.

Neurobiology of disease·2026

Same author

Textile-Based Wearable Electrothermal Pad Using Woven AgNW/EG-PEDOT:PSS Heaters and PS/PEDOT:PSS Thermistor Yarns.

ACS applied materials & interfaces·2026

Search research articles

Related Experiment Video

Updated: Jun 3, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Contact-Engineered Oxide Memtransistors for Homeostasis-Based High-Linearity and Precision Neuromorphic Computing.

San Nam¹, Donghyun Kang¹, Seong-Pil Jeon²

¹School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

Small (Weinheim an Der Bergstrasse, Germany)

|January 6, 2025

Summary

Three-terminal oxide memtransistors enable homeostasis in neuromorphic computing. This technology offers highly linear synaptic weight updates and improved accuracy for artificial intelligence applications by mimicking biological neural network balance.

Keywords:

contact engineering homeoplasticity indium‐gallium‐zinc‐oxide memtransistors neuromorphic computing

More Related Videos

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

Related Experiment Videos

Last Updated: Jun 3, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

Area of Science:

Neuromorphic Engineering
Materials Science
Artificial Intelligence

Background:

Homeostasis is crucial for biological neural networks, balancing neuronal activity for optimal information processing and learning.
Conventional two-terminal memristors lack global regulation, limiting their ability to implement homeostatic functions in neuromorphic systems.

Purpose of the Study:

To demonstrate three-terminal oxide memtransistor-based homeostatic synapses for neuromorphic computing.
To achieve highly linear synaptic weight updates and enhanced accuracy using gate-controlled indium-gallium-zinc-oxide (IGZO) memtransistors.

Main Methods:

Development of contact-engineered indium-gallium-zinc-oxide (IGZO) memtransistors with optimized source/drain electrodes and interfacial layers.
Leveraging gate control for synaptic weight scaling, enabling high linearity and precision in neuromorphic computing.
Emulation of homeostasis through synaptic scaling and sinusoidal gate voltage control for potential higher-order synaptic functions.

Main Results:

Achieved memtransistors with a high current switching ratio (>10^4) and reliable endurance.
Demonstrated highly linear synaptic weight updates with non-linearity values of 0.01 (potentiation) and -0.01 (depression).
Attained a recognition accuracy of 91.77% for digit images using the homeostatic synaptic scaling.

Conclusions:

Contact-engineered IGZO memtransistors effectively implement homeostasis in neuromorphic computing.
The developed devices offer high linearity, precision, and efficiency, paving the way for advanced artificial intelligence.
Potential for emulating higher-order synaptic functions through advanced gate voltage control strategies.