The Superior Response and High Reproducibility of the Memristor-Integrated Low-Power Transparent SnO₂ Gas Sensor

We present a SnO₂ gas sensor with an HfO₂ layer that exhibits enhanced performance and reliability for gasistor applications, combining a gas sensor and a memristor. The transparent SnO₂ gasistor with a 30 nm HfO₂ layer demonstrated low forming voltages (7.1 V) and a high response rate of 81.28% to 50 ppm of NO₂ gas, representing an approximately 174.86% increase compared to the response of 29.58% from the SnO₂ gas sensor without the HfO₂ layer. The device also showed improved power efficiency and exceptional long-term stability, with reproducibility tests over 10 days at 10 ppm NO₂ showing a minimal variation of 2.4%. These results indicate that the proposed transparent memristor with the 30 nm HfO₂ layer significantly enhances the device's reliability and effectiveness for gasistor applications.