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Updated: May 6, 2026
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Design and Growth of P-Type AlGaN Graded Composition Superlattice
Yang Liu1, Xue Yang1, Xiaowei Zhou1,2
1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Abstract:
A graded composition superlattice structure is proposed by combining simulation with experimentation. The structural factors affecting graded symmetric superlattices and graded asymmetric superlattices and their action modes are simulated and analyzed. A Mg-doped graded symmetric superlattice structure with high Al content, excellent structural quality, good surface morphology and excellent electrical properties was grown by MOCVD equipment. The AlxGa1-xN superlattice with Al composition of 0.7 in the barrier exhibits a hole concentration of approximately 5 × 1015 cm-3 and a resistivity of 66 Ω·cm.
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