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Updated: Jun 3, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
The Overview of Silicon Carbide Technology: Status, Challenges, Key Drivers, and Product Roadmap
Maciej Kamiński1,2, Krystian Król1, Norbert Kwietniewski1
1Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa Str., 00-662 Warsaw, Poland.
Abstract:
Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial high-voltage/high-power applications. This paper provides a comprehensive overview of the state of the art of SiC technology focusing on the challenges starting from the difficult and lengthy SiC substrate growth all the way to the complex MOSFET assembly processes. We focus on the differentiation from the established Si manufacturing processes and provide a comprehensive list of references as well as a brief description of our own research into the key manufacturing processes in this technology. We also present a SiC technology and product roadmap.
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