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Nonvolatile Memory Device Based on the Ferroelectric Metal/Ferroelectric Semiconductor Junction

Yan Li1, Yulin Yang1, Hanzhang Zhao1

  • 1Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.

Nano Letters
|January 15, 2025
PubMed

Keywords:
2D ferroelectric semiconductor junctionsWTe2/α-In2Se3ferroelectric metalmultiresistance levels

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