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Computationally efficient machine-learned model for GST phase change materials via direct and indirect learning.

Owen R Dunton1, Tom Arbaugh1, Francis W Starr1

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A new machine-learned potential for Ge2Sb2Te5 (GST) offers faster simulations for solid-state memory. This Atomic Cluster Expansion model enables efficient study of phase transitions in device-scale systems.

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Area of Science:

  • Materials Science
  • Computational Materials Science
  • Solid-State Physics

Background:

  • Ge2Sb2Te5 (GST) is a key phase change material for non-volatile memory.
  • Existing Gaussian Approximation Potential (GAP) models for GST, while accurate, face computational limitations for large-scale simulations.
  • Molecular modeling is crucial for understanding GST's behavior in memory devices.

Purpose of the Study:

  • To develop a faster machine-learned (ML) potential for Ge2Sb2Te5 (GST) using the Atomic Cluster Expansion (ACE) framework.
  • To enable simulations of large length and time scales for GST phase transitions.
  • To compare the performance and accuracy of ACE potentials trained directly from DFT versus indirectly from an intermediate GAP model.

Main Methods:

  • Implementation of a machine-learned potential for GST within the Atomic Cluster Expansion (ACE) framework.
  • Training of ACE potentials directly from Density Functional Theory (DFT) data.
  • Training of ACE potentials indirectly from an intermediate Gaussian Approximation Potential (GAP) model.
  • Utilizing graphics processing unit (GPU) acceleration for enhanced computational speed.

Main Results:

  • The developed ACE potential for GST demonstrates comparable accuracy to the GAP potential.
  • The ACE potential achieves significantly faster simulation speeds, orders of magnitude greater than GAP.
  • Both directly and indirectly trained ACE potentials accurately reproduce GST's structure and thermodynamics, aligning with experimental data.
  • The accelerated ACE model facilitates the examination of repeated phase transitions in device-scale systems.

Conclusions:

  • The ACE-based ML potential provides a computationally efficient tool for studying GST.
  • This advancement allows for the investigation of complex phenomena like repeated phase transitions in solid-state memory materials.
  • The developed potential significantly reduces the computational resources required for large-scale simulations of GST.