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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jun 2, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Modification of the Se/MoO Rear Interface for Efficient Wide-Band-Gap Trigonal Selenium Solar Cells.

Feixiong Bao^1,2, Lianglan Liu³, Xinlong Wang^1,2

¹Institute of New Energy Technology, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China.

ACS Applied Materials & Interfaces

|January 15, 2025

Summary

Trigonal selenium solar cells show improved performance by forming a molybdenum selenide layer at the interface. This modification enhances carrier transport and reduces electrical losses, boosting overall efficiency.

Keywords:

hole transport layer interface solar cell trigonal selenium wide bandgap

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Published on: March 6, 2020

Area of Science:

Materials Science
Photovoltaics
Semiconductor Physics

Background:

Trigonal selenium (t-Se) is a wide-band-gap photovoltaic material with desirable properties for indoor and tandem solar cells.
Electrical losses at the t-Se/hole transport layer interface, due to work function and lattice mismatches, hinder device performance.

Purpose of the Study:

To enhance carrier transport and collection in t-Se solar cells.
To mitigate interfacial electrical losses by modifying chemical interactions.

Main Methods:

A controlled heat process was applied during the deposition of the molybdenum oxide (MoO) hole transport layer.
This facilitated chemical interaction at the t-Se/MoO interface, forming a molybdenum selenide (MoSe) layer.

Main Results:

The formation of an interfacial MoSe layer improved valence band alignment.
Reduced barrier and recombination losses were observed at the t-Se/MoSe interface.
The performance of t-Se thin-film solar cells was enhanced compared to devices without the heating process.

Conclusions:

Controlled interfacial engineering via a heat treatment is an effective strategy to improve t-Se solar cell performance.
The formation of MoSe at the interface significantly reduces electrical losses.
This approach offers a pathway for advanced photovoltaic applications using t-Se absorbers.