Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

460
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
460
Voltaic/Galvanic Cells02:47

Voltaic/Galvanic Cells

56.7K
Spontaneous Chemical Reactions
Spontaneous redox reactions occur abundantly in nature. The chemical reaction occurring in a disposable AA battery powering our remote controls is one such example of a spontaneous redox reaction. Another example is the immersion of coiled copper wire into an aqueous silver nitrate solution. The reaction shows a gradual, visually impressive color change from colorless to bright blue and the formation of a grey precipitate on the copper wire. In this experiment,...
56.7K
Schottky Barrier Diode01:27

Schottky Barrier Diode

291
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
291

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Soft supermolecule stabilized buried interface for high-performance inverted perovskite solar cells and modules.

Nature communications·2026
Same author

Tetraborylated Multiple Resonance Emitter Incorporating B─O Bond-Embedded π-Extension for Ultra-Narrowband and High-Efficiency Blue Devices.

Angewandte Chemie (International ed. in English)·2026
Same author

Constructive Electroluminescence Interference for Ultra-Efficient and Narrowband Perovskite-Organic Tandem LEDs.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Unlocking 27.3% perovskite photovoltaics by interface-locked dual-molecule contact.

Science advances·2026
Same author

Tetraphosphorylated phthalocyanine-based self-assembled monolayer stabilizes perovskite photovoltaics.

Science advances·2026
Same author

Buried-interface stabilization for efficient and bright blue perovskite LEDs.

Nature communications·2026

Related Experiment Video

Updated: Jun 2, 2025

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation
06:49

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

Published on: March 2, 2021

6.2K

Rationally designed universal passivator for high-performance single-junction and tandem perovskite solar cells.

Zuolin Zhang1, Yinsu Feng1, Jike Ding1

  • 1State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Materials Science and Engineering, Hebei University of Technology, Tianjin, China.

Nature Communications
|January 17, 2025
PubMed
Summary

A new molecular passivator, L-valine benzyl ester p-toluenesulfonate (VBETS), enhances perovskite solar cells (PSCs) by reducing defects. This leads to record power conversion efficiencies for both single-junction and tandem PSC devices.

More Related Videos

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.5K
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

9.5K

Related Experiment Videos

Last Updated: Jun 2, 2025

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation
06:49

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

Published on: March 2, 2021

6.2K
Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.5K
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

9.5K

Area of Science:

  • Materials Science
  • Renewable Energy
  • Photovoltaics

Background:

  • Interfacial recombination due to defects in metal halide perovskite solar cells (PSCs) limits their efficiency and stability.
  • Developing effective passivation strategies is crucial for advancing PSC technology.

Purpose of the Study:

  • To design and implement a universal passivator for highly efficient and stable single-junction and tandem PSCs.
  • To investigate the role of molecular structure, specifically hydrogen atom count and steric hindrance, in defect passivation.

Main Methods:

  • Rational design of a molecular passivator, L-valine benzyl ester p-toluenesulfonate (VBETS).
  • Application of VBETS to inverted PSCs and perovskite/silicon tandem solar cells.
  • Utilized vacuum flash processing technology for device fabrication.
  • Investigated defect passivation through synergistic effects of anion and cation, modulated by hydrogen atoms and steric hindrance.

Main Results:

  • VBETS-modified inverted PSCs achieved a power conversion efficiency (PCE) of 26.28%.
  • Large-area modules (32.144 cm²) demonstrated a PCE of 21.00%.
  • Perovskite/silicon tandem solar cells with VBETS passivation reached a PCE of 30.98%.
  • Minimized interfacial energy loss and suppressed carrier recombination were observed.

Conclusions:

  • The developed VBETS passivator effectively addresses interfacial defects, significantly boosting PSC performance.
  • Precise control over molecular design, including hydrogen atom count and steric hindrance, is key to optimizing PCE and stability.
  • This work provides a pathway for developing next-generation, high-efficiency perovskite solar cells.