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Short-Wave Infrared Optoelectronics with Colloidal CdHgSe/ZnCdS Core/Shell Nanoplatelets
Hossein Roshan1, Anatol Prudnikau2, Jinfei Dai3
1Photonic Nanomaterials, Istituto Italiano di Tecnologia, 16163 Genova, Italy.
Summary
Core/shell semiconductor nanoplatelets (NPLs) show versatility for optoelectronic devices. These nanomaterials achieve high performance in both light-emitting diodes and photodetectors within the short-wave infrared spectrum.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Colloidal semiconductor nanocrystals (NCs) are crucial for optoelectronic applications.
- Semiconductor nanoplatelets (NPLs) offer precise structural control and uniform thickness.
- Advancements rely on synthetic chemistry, surface tuning, and device architecture.
Purpose of the Study:
- To demonstrate the application of core/shell CdHgSe/ZnCdS NPLs in optoelectronics.
- To explore the utility of these NPLs in the short-wave infrared (SWIR) spectral range.
- To fabricate and assess both light-emitting diodes (LEDs) and photodetectors using the same NPLs.
Main Methods:
- Synthesis of core/shell CdHgSe/ZnCdS semiconductor nanoplatelets.
- Fabrication of optoelectronic devices including LEDs and photodetectors.
- Characterization of device performance in the SWIR spectral range.
Main Results:
- Achieved external quantum efficiency of 7.5% at 1280 nm and 3.8% at 1550 nm for electroluminescence.
- Demonstrated a responsivity of 0.24 A W⁻¹ at 1200 nm for photodetectors.
- Validated the dual functionality of the NPLs for both emission and detection.
Conclusions:
- Core/shell CdHgSe/ZnCdS NPLs are versatile for SWIR optoelectronic applications.
- The NPLs enable efficient fabrication of both LEDs and photodetectors.
- These findings highlight the potential of NPLs for advanced optoelectronic devices.

