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High spin-orbit torque efficiency induced by engineering spin absorption for fully electric-driven magnetization

Pengwei Dou1, Jingyan Zhang1, Tao Zhu2

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Spin-orbit torque (SOT) efficiency is enhanced by engineering interfaces in Pt/Co/Ir trilayers. Inserting a Gd layer significantly reduces critical switching current density for advanced spintronics.

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Area of Science:

  • Spintronics
  • Materials Science
  • Condensed Matter Physics

Background:

  • Spin-orbit torque (SOT)-driven magnetization switching is crucial for next-generation spintronics.
  • Low charge-spin conversion efficiency and high critical switching current density hinder SOT device development.

Purpose of the Study:

  • To enhance SOT efficiency in Pt/Co/Ir trilayers using spin absorption engineering.
  • To reduce critical switching current density for SOT-based storage elements.

Main Methods:

  • Interface engineering by inserting rare metal layers (e.g., Gd) into Pt/Co/Ir trilayers.
  • Measurement of critical switching current density and effective spin Hall angle.
  • First-principles calculations and polarized neutron reflectivity for mechanism analysis.

Main Results:

  • Insertion of a 4.0-nm Gd layer reduced critical switching current density by 58% to 7.5 × 10^6 A cm^-2.
  • Effective spin Hall angle increased to 0.29, approximately three times higher than in Pt/Co/Ir.
  • Spontaneous interfacial CoGd alloy formation enhanced spin mixed conductivity.
  • Tunable deterministic field-free switching polarity was observed.

Conclusions:

  • Spin absorption engineering at the ferromagnet/nonmagnet interface is an effective strategy for high SOT efficiency.
  • The developed approach offers a pathway to low-consumption spintronic circuits.
  • Understanding interfacial effects is key to optimizing spin-charge conversion mechanisms.